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1ea 12 x 20" quartz chamber, low particulate,
5ea mass flow gas inputs, computer controlled w/recipe storage
of up to 350 process steps, temperature controller, Mod. PM
332/ENI OEM 12-1000W solid state RF Generator, rebuilt |
|
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Branson Mod. L3200
Plasma Stripper |
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2ea quartz chambers for 3-6" wafers, low particulate,
cassette to cassette operation, computer controlled, robot/indexer
loader/unloader, ENI 1000W solid state RF generator, rebuilt
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Branson/IPC Mod. 2000
Plasma Asher/Etcher |
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1ea 10"(dia) x 20"(D) quartz barrel, 3ea gas inputs,
w/Mod. 906U 3 channel process programmer, w/Mod. 921C temperature
controller, Mod. PM 119 500W RF Generator, rebuilt |
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Branson/IPC Mod. 3000
Plasma Asher |
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1ea 10"(dia) x 20"(D) quartz chamber, 1ea gas input,
single channel, Mod. PM 119 RF Generator, 500W @ 13.56MHz, rebuilt
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Branson/IPC Mod.
3000 Plasma Asher |
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1ea 8"(dia) x 13"(D) quartz chamber, 1ea gas input,
single channel, Mod. PM 119 RF Generator, 500W @ 13.56MHz, rebuilt
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Branson/IPC Mod. 4000
Plasma Asher/Cleaner |
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1ea 10"(dia) x 20"(D) quartz barrel, 2ea gas inputs,
w/Mod. 906U-4 single channel process programmer, Mod. PM 112
1000W RF Generator, rebuilt |
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Branson/IPC Mod. 4150
Plasma Cleaner/Surface Treatment system |
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1ea 16"(dia) x 30"(D) aluminum barrel, 10.5"
dia x 24" D faraday cage, 2ea gas inputs, single channel
process programmer, Mod. PM 112 1000W RF Generator, rebuilt
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Branson/IPC Mod. 4055
Plasma Surface Treatment/cleaning system |
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aluminum trays/electrodes, 2ea gas inputs, single channel,
Mod. PM 119 RF Generator, 500W @ 13.56MHz, rebuilt |
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Branson/IPC Mod. 4055
Plasma Surface Treatment/cleaning system |
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aluminum trays/electrodes, 2ea gas inputs, single channel, Seren 600W solid state RF Generator, 500W @ 13.56MHz |
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Branson/IPC Mod. 7102 Plasma Surface treatment/cleaning system |
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1ea aluminum chamber 14.75 x 14.75 x 40"(D), with shelves for small parts, 2ea mass flow gas inputs with VCR fittings, all SS plumbing, multi channel/single board computer controlled, with floppy storage, ENI OEM 12B 1250W RF Generator |
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Branson/IPC Mod. 7150 Plasma
Surface Treatment/cleaning system |
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1ea 24"(dia) x 36"(D) aluminum chamber, 4ea gas
inputs, 3 channel controller, Mod. PM 132 1500W RF Generator,
rebuilt |
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Branson/IPC Mod. P2100, 1ea 12"(dia) x 20"(D) quartz barrel
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2ea rotometer gas inputs, 2ea mass flow gas inputs, three channel, with temperature controller tied into channel one, Mod. PM 332 1000W solid state RF Generator (ENI OEM12A) cover safety interlocks/EMO switches |
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Branson/IPC Mod. P3100
Plasma Asher System
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1ea 12"(dia) x 20"(D) quartz barrel, 1ea gas inputs,
w/Mod. P3000, single channel process programmer, Mod. PM332
1000W RF Generator, Power Distribution Module, with EPO circuit,
rebuilt |
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Branson/IPC Mod. S2100
Plasma Asher/Etcher System |
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1ea 12"(dia) x 20"(D) quartz barrel, 3ea rotometer
gas inputs, three channel, with temperature controller tied
into channel one, Mod. PM 112 1000W RF Generator, rebuilt |
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Branson/IPC Mod. S2100MFC |
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1ea 12"(dia) x 20"(D) quartz barrel, 2ea rotometer gas inputs, 2ea mass flow gas inputs, three channel, with temperature controller tied into channel one, Mod. PM 112 1000W RF Generator
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Branson/IPC Mod. S3003
Plasma Cleaner system |
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1ea 8"(dia) x 13"(D) quartz chamber, 1ea gas input,
single channel, Mod. PM 119 RF Generator, 500W @ 13.56MHz, rebuilt
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Branson/IPC Mod. S4100
Plasma Asher System |
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1ea 12"(dia) x 20"(D) quartz barrel, 2ea gas inputs,
w/Mod. 4000C, single channel process programmer, Mod. PM112
1000W RF Generator, rebuilt |
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Branson/IPC Mod. S3100
Plasma Asher system |
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1ea 12"(dia) x 20"(D) quartz barrel, 1ea gas inputs,
w/Mod. 3000C single channel process programmer, Mod. PM112 1000W
RF Generator, rebuilt |
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Gasonics/IPC 9102 Ash/Etch
system |
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1ea 12"(dia) x 20"(D) quartz barrel, soft pumping
and purge valving, low particulate design, 2ea mass flow gas
inputs with VCR fittings, all SS plumbing, multi channel/single
board computer controlled, with floppy storage, temperature
controller, ENI OEM 12B 1250W RF Generator
Gasonics Mod. A3010 single wafer downstream microwave asher/cleaner
system, 1993 vintage, single wafer processing for 4-8"
wafers, approx 60 wafers per hour throughput (process dependent),
programmable microprocessor, Auto wafer loader/unloader, set
up with SMIF, Infrared heat source for process temp. control,
downstream plasma process: no wafer radiation damage, soft-start
vacuum system, Quartz/Aluminum plasma chamber, Equipped with
hard-wire safety interlocks to prevent damage to the system
or injury to either the product or to personnel, Front and backside
resist removal, Automatic photo emission type end-point detection,
In-line cassette-to-cassette, Visual alarm (flashing indicator)
annunciates any illegal operation or program error. |
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Leybold Hereaus Mod.
Z401S RIE/Plasma Etch system |
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S/N 358-16-1038, 13-5/8" dia x 14-5/8"D Stainless
Steel chamber, pneumatic load lock w/manual loading arm, 8.25"
substrate pallet, manually adjustable top electrode for gap
spacing, Up to 6ea gas inputs, Leybold Hereaus Turbovac 450
turbo pump, Leybold Hereaus Mod. D40B mechanical vacuum pump,
MKS Throttle valve, ENI Mod. OEM-6 RF Generator, solid state,
water cooled, 600W @ 13.56MHz, Auto (PLC)/manual logic, 1ea
MKS Mod. PDR-C-1B Torrmeter Power Supply Readout, 1ea MKS
Mod. 252A Throttle Valve Controller, 1ea Leybold Mod. PM 310
Penning Vacuum Gauge, 1ea Leybold Mod. TM 210S TC gauge, 4ea
MKS Mod. PR-3000 Mass Flow Gas Controllers, 1ea Xinix Mod.
1012 End Point Controller, w/fibreoptic cable, 3ea Leybold
Mod. BE05 manual controllers, 2ea Leybold Mod. DCA01 digital
readout displays (Bias, Fwd, and Ref. Power), 1ea Leybold
Mod. NT 450 turbo pump controller |
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| Metroline/Tepla Mod. 7104 Plasma Surface treatment/cleaning system
, 1ea aluminum chamber 14.75 x 14.75 x 40"(D), with shelves for small parts, 4ea mass flow gas inputs with VCR fittings, all SS plumbing, multi channel/single board computer controlled, Windows Based OS, with hard drive for recipe storage, ENI OEM 12B 1250W RF Generator | | | Oxford Mod. uP RIE Plasma Etch system
7" dia electrode, Al chamber, ea gas inputs, ENI Mod. ACG-3 RF Generator, solid state, air cooled, 300W @ 13.56MHz, Auto (PLC)/manual logic, Vacuum general Mod. MDV-028 Throttle Valve with Mod. 80-2 Controller, 3ea VG Mass Flow Gas Controllers, with roughing pump | |
| Tegal 211 plasma ash
for 2-4" wafers, batch type stripper, single gas input,
single channel, 300W RF Generator, manual matching network,
rebuilt | |
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Tegal Mod. 415 plasma
asher |
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for 2-4" wafers, batch type stripper, 1ea gas input,
single channel, auto tuning, auto/manual logic, 300W RF Generator,
rebuilt |
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Tegal Mod. 915 Plasma Asher/Stripper system |
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for up to 5" wafers, batch type, 1ea gas input, 9ea
process recipe storage, auto logic, auto tuning, 500W RFPP solid
state RF Generator, rebuilt |
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